tsm 500n03 30v n-channel power mosfet 1/5 version: a14 to - 252 (dpak) key parameter performance parameter value unit v ds 30 v r ds(on) (max) v gs = 10v 50 m ? v gs = 4.5v 80 q g 4 nc application portable application dc to dc converter block diagram n-channel mosfet ordering information part no. package packing tsm500n03cp rog to-252 2.5kpcs / 13 reel note: g denotes for halogen- and antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds absolute maximum ratings (t c =25c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current t c =25c i d 12.5 a t c =100c 8 a pulsed drain current (note 1) i dm 40 a power dissipation @ t c =25 o c p d 12.5 w operating junction temperature t j 150 c storage temperature range t stg -55 to +150 c thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 10 c/w thermal resistance - junction to ambient r ? ja 110 pin definition : 1. gate 2. drain 3. source
tsm 500n03 30v n-channel power mosfet 2/5 version: a14 electrical specifications (t c =25c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 30 -- -- v drain-source on-state resistance v gs = 10v, i d = 8a r ds(on) -- 40 50 m ? v gs = 4.5v, i d = 8a -- 65 80 gate threshold voltage v ds = v gs , i d = 250a v gs(th) 1 1.7 3 v zero gate voltage drain current v ds = 30v, v gs = 0v i dss -- -- 1 a v ds = 24v, tc = 150c -- -- 25 gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na dynamic total gate charge (note 2,3) v ds = 24v, i d = 10a, v gs = 4.5v q g -- 4 -- nc gate-source charge (note 2,3) q gs -- 1.6 -- gate-drain charge (note 2,3) q gd -- 2.4 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 270 -- pf output capacitance c oss -- 70 -- reverse transfer capacitance c rss -- 50 -- switching turn-on delay time (note 2,3) v dd = 15v, i d = 10a, v gs = 10v, r gen =3.3 ? t d(on) -- 7 -- ns turn-on rise time (note 2,3) t r -- 30 -- turn-off delay time (note 2,3) t d(off) -- 10 -- turn-off fall time (note 2,3) t f -- 3 -- source-drain diode ratings and characteristic diode-source forward voltage v gs = 0v, i s = 5a v sd -- -- 1.3 v reverse recovery time (note 2) v gs = 0v, i s = 10a di f /dt = 100a/s t rr -- 17 -- ns reverse recovery charge (note 2) q rr -- 10 -- nc note: 1. pulse width limited by safe operating area 2. pulse test: pulse width 300s, duty cycle 2% 3. switching time is essentially independent of ope rating temperature.
tsm 500n03 30v n-channel power mosfet 3/5 version: a14 electrical characteristics curves output characteristics capacitance drain-source on-resistance gate-source voltage vs. gate charge safe operation area thermal transient impedance
tsm 500n03 30v n-channel power mosfet 4/5 version: a14 to-252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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